wf wf wf wf f f f f 12 12 12 12 n6 n6 n6 n6 0 0 0 0 c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . silic silic silic silic o o o o n n n n n-c n-c n-c n-c h h h h a a a a n n n n nel nel nel nel mos mos mos mos f f f f et et et et features features features features 12a, 600 v , r ds(on ) (max 0.65 )@ v g s =10v ultra-low gate charge( t y pical 39nc) fast s w i t ching capabi l ity 100% a v al anche t es ted isolati o n volta g e ( v iso = 4 0 00v ac ) maximum junction t e mperature range(150 ) general general general general desc desc desc desc r r r r iption iption iption iption this po w e r mosfet is produced using winsemi s advanced planar stripe, vdmos technolog y . this latest technology has been especial l y designed to minimize on-sta t e resistance, have a high rugged avalanche characteristics. this devices is special l y w e ll suited for high e f f i ciency s w i tch model po w e r supplies, po w e r factor correction and half bridge and full bridge resonant topology line a e lectronic lamp ballast. abs abs abs abs o o o o lute lute lute lute max max max max i i i i mum mum mum mum rati rati rati rati n n n n gs gs gs gs g g g g d d d d s s s s t t t t o o o o 220f 220f 220f 220f symbol parameter v a lue units v dss drain source v o ltage 6 00 v i d continuous drain current( @ t c =25 ) 1 2 * a continuous drain current( @ t c =100 ) 7.6* a i dm drain current pulsed (note1) 4 8 * a v gs gate to source v o ltage 30 v e as sing l e pulsed a v a lanche energy ( note 2) 880 mj e ar repetitive a v a lanche energy ( note 1) 25 mj dv/dt peak diode recovery dv/dt (note 3) 4 .5 v/ns p d t o tal po w e r diss i pation(@ t c =25 ) 51 w derating factor above 25 0.41 w/ t j , t s tg junction and storage t e mperature -55~150 t l maximum lead t e mperature for soldering purposes 300 *drain current limited by maximum junction temperature th th th th e e e e rmal rmal rmal rmal charac charac charac charac t t t t erist erist erist erist i i i i cs cs cs cs symbol parameter v a lue units min t y p max r q j c thermal resistance, junction-to-case - - 2.45 /w r qcs thermal resistance, case to sink - 0.5 - /w r q j a thermal resistance, junction-to-ambient - - 6 2 .5 /w re v . c no v . 2008 t03-1
2 /7 wf wf wf wf f f f f 12 12 12 12 n6 n6 n6 n6 0 0 0 0 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance electric electric electric electric a a a a l l l l charac charac charac charac t t t t erist erist erist erist i i i i cs cs cs cs (tc (tc (tc (tc = = = = 25 25 25 25 c) c) c) c) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 30 v, vds = 0 v - - 100 n a gate ? source breakdo w n voltage v (br)gss i g = 10 a, vds = 0 v 30 - - v drain cu t ? off current i dss v ds = 600 v, vgs = 0 v - - 1 a drai n ? source breakdo w n voltage v (br) d ss i d = 250 a, vgs = 0 v 6 00 - - v break voltage temperature coefficient bv dss / t j i d =25 0 a, referenced to 25 - 0.5 - v/ gate threshold voltage v gs(th) v ds = 10 v, id = 250 a 3 - 4 .5 v drai n ? source on resistance r ds(on) v gs = 10 v, id =6. 0 a - - 0.65 ? for w a rd transconductance gfs v ds = 50 v, id = 6.0a - 15 s input capacitance c i s s v ds = 25 v, v gs = 0 v, f = 1 mhz - 1790 2355 pf reverse trans f er capacitance c r s s - 23 31 output capacitance c o s s - 175 232 s w i t chi ng time tur n ? on rise time t r v dd = 300 v, i d =12 a r g =9.1 ? r d =31 ? (note4,5) - 133 175 ns tur n ? on delay time t on - 80 100 tur n ? off fall time t f - 100 160 tur n ? off delay time t off - 233 310 total gate charge (gat e ? source plus gat e ? drain) qg v dd = 400 v, v gs = 10 v, i d =1 a (note4,5) - 39 52 nc gate ? source charge qgs - 8.5 - gate ? drain ( mil l er ) charge qgd - 19 - source source source source ? ? ? ? drain drain drain drain rati rati rati rati n n n n gs gs gs gs and and and and charac charac charac charac t t t t erist erist erist erist i i i i cs cs cs cs (ta (ta (ta (ta = = = = 2 2 2 2 5 5 5 5 c) c) c) c) characteristics symbol test condition min type max unit continuous drain re v erse current i dr - - - 12 a pulse drain re v erse current i drp - - - 48 a for w a rd voltage (diode) v dsf i dr = 12 a, vgs = 0 v - - 1.4 v reverse reco v ery time t rr i dr = 12 a, vgs = 0 v, di dr / dt = 100 a / s - 4 18 - n s reverse reco v ery charge q rr - 4 . 85 - c note 1.re p e a tivity rating :pulse w id th limit e d by ju n ction temper a ture 2.l= 1 1 . 2 mh,i a s =1 2 a,v dd =50 v ,r g =25 ,starting t j =2 5 3. i sd 1 2a,di/dt 30 0 a/us, v dd 3 /7 wf wf wf wf f f f f 12 12 12 12 n6 n6 n6 n6 0 0 0 0 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig. 1 on-st a t e cha r a cteristics fig.2 t r ans fe r cha r a cteristics fig.3 c a pa c itance v a ri a ti on vs d ra in v o lt ag e fig.5 on- r e sistance v a ri a ti on vs j u nction t e mpe r a tu r e fig.4 b re ak d o w n v o lt ag e v a ri a ti on vs t e mpe r a tu r e fig.6 g a t e cha r g e cha r a cteristics
4 /7 wf wf wf wf f f f f 12 12 12 12 n6 n6 n6 n6 0 0 0 0 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.7 maximum sa f e ope r at ion a re a fig.8 maximum d ra in cu r r e nt vs case t e mpe r a tu r e fig.9 t r ansient t h e r m al r e sponse cu r v e
5 /7 fig.10 g a t e t e st ci rcu it & w a v e f o r m wf wf wf wf f f f f 12 12 12 12 n6 n6 n6 n6 0 0 0 0 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.11 r e sisti v e swit c h ing t e st ci rcu it & w a v e f o r m fig.12 un c l amped inducti v e swit c h ing t e st ci rcu it & w a v e f o r m
6 /7 wf wf wf wf f f f f 12 12 12 12 n6 n6 n6 n6 0 0 0 0 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance fig.13 p e ak diode r e c ov e r y dv/dt t e st ci rcu it & w a v e f o r m
7 /7 wf wf wf wf f f f f 12 12 12 12 n6 n6 n6 n6 0 0 0 0 steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance t t t t o- o- o- o- 22 22 22 22 0 0 0 0 f f f f pa pa pa pa c c c c kage kage kage kage dimension dimension dimension dimension u u u u nit: nit: nit: nit: mm mm mm mm
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